- 专利标题: Method for repairing a photomask, method for inspecting a photomask, method for manufacturing a photomask, and method for manufacturing a semiconductor device
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申请号: US11478650申请日: 2006-07-03
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公开(公告)号: US20060257756A1公开(公告)日: 2006-11-16
- 发明人: Katsuki Ohashi , Hiromu Inoue , Akira Ono , Hiroyuki Ikeda
- 申请人: Katsuki Ohashi , Hiromu Inoue , Akira Ono , Hiroyuki Ikeda
- 专利权人: Kabushiki Kaishi Toshiba
- 当前专利权人: Kabushiki Kaishi Toshiba
- 优先权: JP9-171695 19970627; JP10-201942 19980716
- 主分类号: G03F1/00
- IPC分类号: G03F1/00 ; G06K9/00 ; G03C5/00
摘要:
A method for inspecting a photomask, comprising generating a laser beam, changing a phase of the laser beam to smooth the brightness distribution of the laser beam, applying the smoothed laser beam to the photomask, acquiring an image of the photomask using a sensor while the laser beam and the photomask are relatively moved, examining the image of the photomask for a defect of the mask-pattern of the photomask.
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