发明申请
- 专利标题： Contact portion and manufacturing method thereof, thin film transistor array panel and manufacturing method thereof
- 专利标题（中）： 接触部分及其制造方法，薄膜晶体管阵列面板及其制造方法
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申请号： US10554718申请日： 2005-02-11
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公开(公告)号： US20060258059A1公开(公告)日： 2006-11-16
- 发明人: Jong-Hyun Seo , Mun-Pyo Hong , Dae-Ok Kim
- 申请人： Jong-Hyun Seo , Mun-Pyo Hong , Dae-Ok Kim
- 优先权： KR10-2004-0008956 20040211
- 国际申请： PCT/KR05/00392 WO 20050211
- 主分类号： H01L21/82
- IPC分类号： H01L21/82 ; H01L21/84 ; H01L23/02
摘要：
A method of manufacturing a contact portion is provided, which includes: forming a first signal line on a substrate (110), forming a insulating layer (140) covering the first signal line and having a contact hole (182, 185) exposing the first signal line; forming a contact layer (700) on the exposed surface of the first signal through the contact hole; and forming a second signal line (82, 190) connected to the first signal line via the contact layer. Wherein the first signal line is made of Al or Al alloy, and the second signal line is made of ITO or IZO.
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