- 专利标题： Methods of forming field effect transistors
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申请号： US11490681申请日： 2006-07-21
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公开(公告)号： US20060258071A1公开(公告)日： 2006-11-16
- 发明人: Gurtej Sandhu , H. Manning , Cem Basceri
- 申请人： Gurtej Sandhu , H. Manning , Cem Basceri
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 主分类号： H01L21/337
- IPC分类号： H01L21/337
摘要：
A mass of material is formed over a semiconductor substrate. Semiconductive material is formed laterally proximate the mass of material. A space is provided laterally between the mass of material and the semiconductive material. The space comprises an outermost portion and a portion immediately adjacent thereto. The outermost portion has a maximum lateral width which is greater than that of the adjacent portion. Gate dielectric material and conductive gate material are formed within the space. The gate dielectric material and the conductive gate material in combination fill the adjacent portion of the space but do not fill the outermost portion of the space. At least the conductive gate material is etched from at least a majority of the outermost portion of the space. Source/drain regions are formed operatively proximate the conductive gate material and the semiconductive material is used as a channel region of the field effect transistor.
公开/授权文献
- US07557006B2 Methods of forming field effect transistors 公开/授权日：2009-07-07
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