发明申请
US20060258072A1 Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions
有权
隧道场效应晶体管使用成角度的植入物形成不对称的源极/漏极区域
- 专利标题: Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions
- 专利标题(中): 隧道场效应晶体管使用成角度的植入物形成不对称的源极/漏极区域
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申请号: US11129520申请日: 2005-05-13
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公开(公告)号: US20060258072A1公开(公告)日: 2006-11-16
- 发明人: Jack Kavalieros , Matthew Metz , Gilbert Dewey , Been-Yih Jin , Justin Brask , Suman Datta , Robert Chau
- 申请人: Jack Kavalieros , Matthew Metz , Gilbert Dewey , Been-Yih Jin , Justin Brask , Suman Datta , Robert Chau
- 主分类号: H01L21/8234
- IPC分类号: H01L21/8234
摘要:
The present invention relates to a Tunnel Field Effect Transistor (TFET), which utilizes angle implantation and amorphization to form asymmetric source and drain regions. The TFET further comprises a silicon germanium alloy epitaxial source region with a conductivity opposite that of the drain.