发明申请
- 专利标题: III-nitride semiconductor light emitting device
- 专利标题(中): III族氮化物半导体发光器件
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申请号: US10544271申请日: 2005-03-04
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公开(公告)号: US20060261344A1公开(公告)日: 2006-11-23
- 发明人: Tae-Kyung Yoo , Chang Tae Kim , Eun Park , Soo Kun Jeon
- 申请人: Tae-Kyung Yoo , Chang Tae Kim , Eun Park , Soo Kun Jeon
- 国际申请: PCT/KR05/00618 WO 20050304
- 主分类号: H01L31/0312
- IPC分类号: H01L31/0312
摘要:
The present invention relates to a III-nitride semiconductor light emitting device comprising a plurality of III-nitride semiconductor layers including an active layer emitting light by recombination of electrons and holes, the plurality of III-nitride semiconductor layers having a p-type III-nitride semiconductor layer at the top thereof, an SiaCbNc (a≧0,b>0,c≧0,a+c>0) layer grown on the p-type III-nitride semiconductor layer, the SiaCbNc (a≧0,b>0,c≧0,a+c>0) layer having an n-type conductivity and a thickness of 5 Å to 500 Å for the holes to be injected into the p-type III-nitride semiconductor layer by tunneling, and a p-side electrode formed on the SiaCbNc (a≧0,b>0,c≧0,a+c>0) layer. Generally, in III-nitride semiconductor light emitting devices, if a p-side electrode is formed directly on a p-type nitride semiconductor, high contact resistance is generated due to a high energy bandgap and low doping efficiency of the p-type nitride semiconductor. This makes the efficiency of the device degraded. According to the present invention, however, a SiaCbNc (a≧0,b>0,c≧0,a+c>0) layer which can be doped with a high concentration is intervened between a p-type nitride semiconductor and a p-side electrode. Therefore, the present invention can solve the conventional problem.
公开/授权文献
- US07432534B2 III-nitride semiconductor light emitting device 公开/授权日:2008-10-07