- 专利标题： Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
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申请号： US11404876申请日： 2006-04-17
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公开(公告)号： US20060261352A1公开(公告)日： 2006-11-23
- 发明人: Takashi Takahashi , Morimasa Kaminishi , Shunichi Sato , Akihiro Itoh , Naoto Jikutani
- 申请人： Takashi Takahashi , Morimasa Kaminishi , Shunichi Sato , Akihiro Itoh , Naoto Jikutani
- 优先权： JP2001-089068 20010327; JP2001-210462 20010711; JP2001-252537 20010823; JP2001-253382 20010823; JP2001-262902 20010831; JP2001-288367 20010921; JP2001-292958 20010926; JP2001-293353 20010926; JP2001-297936 20010927; JP2001-297937 20010927; JP2001-297938 20010927; JP2001-297939 20010927; JP2001-390927 20011225; JP2002-029822 20020206; JP2002-065431 20020311
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.
公开/授权文献
- US07453096B2 Method of fabricating a semiconductor light-emitting device 公开/授权日：2008-11-18
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