发明申请
US20060264065A1 Sacrificial styrene benzocyclobutene copolymers for making air gap semiconductor devices
审中-公开
用于制造气隙半导体器件的牺牲苯乙烯苯并环丁烯共聚物
- 专利标题： Sacrificial styrene benzocyclobutene copolymers for making air gap semiconductor devices
- 专利标题（中）： 用于制造气隙半导体器件的牺牲苯乙烯苯并环丁烯共聚物
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申请号： US10544416申请日： 2004-01-30
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公开(公告)号： US20060264065A1公开(公告)日： 2006-11-23
- 发明人: Ying So , Stephen Hahn , Robert Kirchhoff , Kenneth Foster
- 申请人： Ying So , Stephen Hahn , Robert Kirchhoff , Kenneth Foster
- 国际申请： PCT/US04/02658 WO 20040130
- 主分类号： H01L23/58
- IPC分类号： H01L23/58 ; H01L21/31 ; H01L21/469
摘要：
A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial polymer of step (a) is a copolymer of styrene or styrene derivative (such as alpha methyl styrene) and vinylbenzocyclobutene or a vinylbenzocyclobutene derivative. In addition, a semiconductor structure, having a sacrificial polymer positioned between conductor lines, wherein the sacrificial polymer is a copolymer of styrene or styrene derivative and vinylbenzocyclobutene or a vinylbenzocyclobutene derivative.
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