发明申请
US20060266997A1 Methods for forming semiconductor structures with differential surface layer thicknesses
审中-公开
用于形成具有差的表面层厚度的半导体结构的方法
- 专利标题： Methods for forming semiconductor structures with differential surface layer thicknesses
- 专利标题（中）： 用于形成具有差的表面层厚度的半导体结构的方法
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申请号： US11498521申请日： 2006-08-03
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公开(公告)号： US20060266997A1公开(公告)日： 2006-11-30
- 发明人: Matthew Currie , Anthony Lochtefeld , Eugene Fitzgerald
- 申请人： Matthew Currie , Anthony Lochtefeld , Eugene Fitzgerald
- 申请人地址： US NH Salem
- 专利权人： AmberWave Systems Corporation
- 当前专利权人： AmberWave Systems Corporation
- 当前专利权人地址： US NH Salem
- 主分类号： H01L31/00
- IPC分类号： H01L31/00
摘要：
A semiconductor structure having a substrate with a surface layer including strained silicon. The surface layer has a first region with a first thickness less than a second thickness of a second region. A gate dielectric layer is disposed over a portion of at least the first surface layer region.
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