发明申请
US20060267027A1 Light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency
审中-公开
具有高光提取效率的发光氮化镓III-V族化合物半导体器件
- 专利标题： Light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency
- 专利标题（中）： 具有高光提取效率的发光氮化镓III-V族化合物半导体器件
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申请号： US11485263申请日： 2006-07-13
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公开(公告)号： US20060267027A1公开(公告)日： 2006-11-30
- 发明人: Mu-Jen Lai , Schang-Jing Hon , Jenn-Bin Huang , Chi-Feng Chan , Hsueh-Feng Sun , Shi-Ming Yang
- 申请人： Mu-Jen Lai , Schang-Jing Hon , Jenn-Bin Huang , Chi-Feng Chan , Hsueh-Feng Sun , Shi-Ming Yang
- 优先权： TW093214830 20040916
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
A light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency that features on a substrate with concave and /or convex surface, a texturing surface layer, and a transparent conductive window layer. Therefore, the operating voltage is decreased and the efficiency of light extracting is improved.
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