发明申请
US20060267671A1 Charge pump circuit for high side drive circuit and driver driving voltage circuit
有权
充电泵电路用于高侧驱动电路和驱动驱动电压电路
- 专利标题: Charge pump circuit for high side drive circuit and driver driving voltage circuit
- 专利标题(中): 充电泵电路用于高侧驱动电路和驱动驱动电压电路
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申请号: US11441415申请日: 2006-05-25
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公开(公告)号: US20060267671A1公开(公告)日: 2006-11-30
- 发明人: Qadeer Khan , Hidetaka Fukazawa , Tushar Nandurkar
- 申请人: Qadeer Khan , Hidetaka Fukazawa , Tushar Nandurkar
- 优先权: IN1373/DEL/2005 20050527
- 主分类号: G05F1/10
- IPC分类号: G05F1/10
摘要:
A charge pump circuit for a high side drive circuit and a driver driving voltage circuit that stably output a voltage when input voltage is low. The charge pump circuit includes first and second transistors, first and second capacitors, and first to third diodes. The first capacitor has a high voltage side, connected to a load driving power supply voltage via the first diode, and a low voltage side, connected to the load driving power supply voltage via the first transistor or grounded via the second transistor driven in synchronization with the first transistor. The high voltage side is supplied, via the third diode, with a low side drive voltage that is as an output voltage of a low side charge pump, and functions to output high side drive voltage to a high side pre-driver circuit via the second diode.
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