发明申请
- 专利标题: LIGHT EMITTING SEMICONDUCTOR DEVICE HAVING AN ELECTRICAL CONFINEMENT BARRIER NEAR THE ACTIVE REGION
- 专利标题(中): 具有活动区域附近的电气限制障碍物的发光半导体器件
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申请号: US11461353申请日: 2006-07-31
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公开(公告)号: US20060268954A1公开(公告)日: 2006-11-30
- 发明人: Ralph Johnson , James Biard , James Guenter
- 申请人: Ralph Johnson , James Biard , James Guenter
- 主分类号: H01S5/00
- IPC分类号: H01S5/00
摘要:
Light emitting semiconductor devices such as VCSELs, SELs, and LEDs are manufactured to have a thin electrical confinement barrier in a confining layer near the active region of the device. The thin confinement barrier comprises a III-V semiconductor material having a high aluminum content (e.g. 80%-100% of the type III material). The aluminum content of the adjacent spacer layer is lower than that of the confinement barrier. In one embodiment the spacer layer has an aluminum content of less than 40% and a direct bandgap. The aluminum profile reduces series resistance and improves the efficiency of the semiconductor device.