发明申请
US20060270201A1 Nano-air-bridged lateral overgrowth of GaN semiconductor layer
审中-公开
GaN半导体层的纳米空气桥接横向过度生长
- 专利标题： Nano-air-bridged lateral overgrowth of GaN semiconductor layer
- 专利标题（中）： GaN半导体层的纳米空气桥接横向过度生长
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申请号： US11434399申请日： 2006-05-15
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公开(公告)号： US20060270201A1公开(公告)日： 2006-11-30
- 发明人: Soo Chua , Yadong Wang , Keyan Zang
- 申请人： Soo Chua , Yadong Wang , Keyan Zang
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A technique for growing a high quality gallium nitride layer on a uniform nano-patterned substrate is described. The invented technique is based on the transfer of ordered nano-patterns from a nano-template to the substrate, followed by the growth of gallium nitride on the nano-patterned substrate. The nano-patterned substrate serves as a buffer layer to reduce the stress and dislocations.