发明申请
US20060270226A1 Reflective mask blank, reflective mask, and method for manufacturing semiconductor device
审中-公开
反射掩模板,反射掩模和半导体器件的制造方法
- 专利标题: Reflective mask blank, reflective mask, and method for manufacturing semiconductor device
- 专利标题(中): 反射掩模板,反射掩模和半导体器件的制造方法
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申请号: US11439145申请日: 2006-05-24
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公开(公告)号: US20060270226A1公开(公告)日: 2006-11-30
- 发明人: Morio Hosoya
- 申请人: Morio Hosoya
- 专利权人: HOYA CORPORATION
- 当前专利权人: HOYA CORPORATION
- 优先权: JP2005-150487 20050524
- 主分类号: G03F1/00
- IPC分类号: G03F1/00 ; H01L21/44 ; H01L23/48
摘要:
A reflective mask blank comprises a multilayer reflective film for reflecting exposure light and formed on a substrate, a protective film for protecting the multilayer reflective film and formed above the multilayer reflective film, an absorber film for absorbing the exposure light and formed on the protective film, and a thermal diffusion-preventing film formed between the multilayer reflective film and the protective film. The protective film is made of ruthenium or a ruthenium compound containing ruthenium and at least one selected from the group consisting of molybdenum, niobium, zirconium, yttrium, boron, titanium, and lanthanum. The thermal diffusion-preventing film is made of a material having a refractive index of greater than 0.90 and an extinction coefficient of less than −0.020. A reflective mask comprises the reflective mask blank wherein the absorber film is formed with a pattern to be transferred to a transfer body.
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