发明申请
US20060270226A1 Reflective mask blank, reflective mask, and method for manufacturing semiconductor device 审中-公开
反射掩模板,反射掩模和半导体器件的制造方法

  • 专利标题: Reflective mask blank, reflective mask, and method for manufacturing semiconductor device
  • 专利标题(中): 反射掩模板,反射掩模和半导体器件的制造方法
  • 申请号: US11439145
    申请日: 2006-05-24
  • 公开(公告)号: US20060270226A1
    公开(公告)日: 2006-11-30
  • 发明人: Morio Hosoya
  • 申请人: Morio Hosoya
  • 专利权人: HOYA CORPORATION
  • 当前专利权人: HOYA CORPORATION
  • 优先权: JP2005-150487 20050524
  • 主分类号: G03F1/00
  • IPC分类号: G03F1/00 H01L21/44 H01L23/48
Reflective mask blank, reflective mask, and method for manufacturing semiconductor device
摘要:
A reflective mask blank comprises a multilayer reflective film for reflecting exposure light and formed on a substrate, a protective film for protecting the multilayer reflective film and formed above the multilayer reflective film, an absorber film for absorbing the exposure light and formed on the protective film, and a thermal diffusion-preventing film formed between the multilayer reflective film and the protective film. The protective film is made of ruthenium or a ruthenium compound containing ruthenium and at least one selected from the group consisting of molybdenum, niobium, zirconium, yttrium, boron, titanium, and lanthanum. The thermal diffusion-preventing film is made of a material having a refractive index of greater than 0.90 and an extinction coefficient of less than −0.020. A reflective mask comprises the reflective mask blank wherein the absorber film is formed with a pattern to be transferred to a transfer body.
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