发明申请
- 专利标题： Semiconductor device and the manufacturing method for the same
- 专利标题（中）： 半导体器件及其制造方法相同
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申请号： US11004291申请日： 2004-12-03
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公开(公告)号： US20060273434A1公开(公告)日： 2006-12-07
- 发明人: Kazutaka Shibata
- 申请人： Kazutaka Shibata
- 申请人地址： JP Kyoto-shi
- 专利权人： ROHM CO., LTD.
- 当前专利权人： ROHM CO., LTD.
- 当前专利权人地址： JP Kyoto-shi
- 优先权： JPP.2003-406703 20031205; JPP.2004-017752 20040127
- 主分类号： H01L23/495
- IPC分类号： H01L23/495
摘要：
A semiconductor device has a semiconductor substrate having first and second surface, a first resin film formed on the first surface of the semiconductor substrate and a second resin film formed on the second surface of the semiconductor substrate. A projection electrode or an interconnection is formed on the first surface of the semiconductor substrate, the second resin film is made of low elastic resin which is capable of absorbing an impact applied to the second surface of the semiconductor substrate and the second resin film is thinner than the semiconductor substrate.
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