发明申请
US20060273866A1 Film bulk acoustic wave resonator with differential topology
审中-公开
具有差分拓扑结构的薄膜体声波谐振器
- 专利标题: Film bulk acoustic wave resonator with differential topology
- 专利标题(中): 具有差分拓扑结构的薄膜体声波谐振器
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申请号: US11146118申请日: 2005-06-07
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公开(公告)号: US20060273866A1公开(公告)日: 2006-12-07
- 发明人: Ari Vilander
- 申请人: Ari Vilander
- 专利权人: Nokia Corporation
- 当前专利权人: Nokia Corporation
- 主分类号: H03H9/56
- IPC分类号: H03H9/56
摘要:
The present invention relates to a resonator structure, such as a film bulk acoustic wave (FBAW) resonator structure, which is modified to approximate a parasitic input characteristic to a parasitic output characteristic and thus enable use of the resonator structure in a differential topology. Thereby, crystal-based resonator structures can be replaced by the proposed differential resonator structure, which enables higher integration, reduced costs and higher frequencies. A crystal based oscillator cannot handle frequencies above 40 MHz in fundamental mode.