- 专利标题: Fully differential, high Q, on-chip, impedance matching section
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申请号: US11504073申请日: 2006-08-15
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公开(公告)号: US20060273874A1公开(公告)日: 2006-12-07
- 发明人: Carol Barrett , Tom McKay , Subhas Bothra
- 申请人: Carol Barrett , Tom McKay , Subhas Bothra
- 申请人地址: US CA Irvine US CA Santa Clara
- 专利权人: Broadcom Corporation,Zeevo, Inc.
- 当前专利权人: Broadcom Corporation,Zeevo, Inc.
- 当前专利权人地址: US CA Irvine US CA Santa Clara
- 主分类号: H01F5/00
- IPC分类号: H01F5/00
摘要:
An inductor circuit is disclosed. The inductor circuit includes a first in-silicon inductor and a second in-silicon inductor each having multiple turns. A portion of the multiple turns of the second in-silicon inductor is formed between turns of the first in-silicon inductor. The first and second in-silicon inductors are configured such that a differential current flowing through the first in-silicon inductor and the second in-silicon inductor flows in a same direction in corresponding turns of inductors.
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