- 专利标题： Active region of a light emitting device optimized for increased modulation speed operation
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申请号： US11143374申请日： 2005-06-01
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公开(公告)号： US20060274801A1公开(公告)日： 2006-12-07
- 发明人: Ashish Tandon , Kostadin Djordjev , Chao-Kun Lin , Michael Tan
- 申请人： Ashish Tandon , Kostadin Djordjev , Chao-Kun Lin , Michael Tan
- 主分类号： H01S5/00
- IPC分类号： H01S5/00
摘要：
In accordance with the invention, increased maximum modulation speeds and improved hole distribution are obtained for light emitting devices. Barrier layers of a quantum well structure for a light emitting device are formed with varying barrier energy heights. Quantum well layers of the quantum well structure are formed between the barrier layers.