发明申请
- 专利标题: Method of forming stack layer and method of manufacturing electronic device having the same
- 专利标题(中): 形成叠层的方法及其制造方法
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申请号: US11435289申请日: 2006-05-17
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公开(公告)号: US20060275987A1公开(公告)日: 2006-12-07
- 发明人: Shang-Hyeun Park , Hang-Woo Lee , Young-Hwan Kim
- 申请人: Shang-Hyeun Park , Hang-Woo Lee , Young-Hwan Kim
- 优先权: KR10-2005-0041759 20050518
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
A method of forming a stacked structure in an electronic device, where a photoresist for performing multi-patterning processes is used. Also, a method of manufacturing a FED in which different structures can be multi-patterned by using a single photoresist mask. The photoresist has a solubility to a solvent by heat-treatment after exposure, and a complicated structure can be formed using the photoresist.
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