发明申请
- 专利标题: Novel method to implement stress free polishing
- 专利标题(中): 实现无压力抛光的新方法
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申请号: US11142215申请日: 2005-06-01
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公开(公告)号: US20060276030A1公开(公告)日: 2006-12-07
- 发明人: Jean Wang , Chia-Ming Yang , Henry Lo , Joshua Tseng
- 申请人: Jean Wang , Chia-Ming Yang , Henry Lo , Joshua Tseng
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763
摘要:
A method of forming a metal feature in a low-k dielectric layer is provided. The method includes forming an opening in a low-k dielectric layer, forming a metal layer having a substantially planar surface over the low-k dielectric layer using spin-on method, and stress free polishing the metal layer. Preferably, the metal layer comprises copper or copper alloys. The metal layer preferably includes a first sub layer having a substantially non-planar surface and a second sub layer having a substantially planar surface on the first sub layer.
公开/授权文献
- US07544606B2 Method to implement stress free polishing 公开/授权日:2009-06-09