发明申请
- 专利标题： Power rectifier and manufacturing method thereof
- 专利标题（中）： 电力整流器及其制造方法
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申请号： US11148388申请日： 2005-06-09
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公开(公告)号： US20060278889A1公开(公告)日： 2006-12-14
- 发明人: Chieh-Hung Tsai , Ching-Chiu Tseng , Hung-Lung Cheng
- 申请人： Chieh-Hung Tsai , Ching-Chiu Tseng , Hung-Lung Cheng
- 专利权人： LITE-ON SEMICONDUCTOR CORP.
- 当前专利权人： LITE-ON SEMICONDUCTOR CORP.
- 主分类号： H01L29/74
- IPC分类号： H01L29/74
摘要：
A power rectifier and its manufacturing method are proposed in the present invention. A cylinder-shaped PN junction is formed during the manufacturing process of the power rectifier. Via the effect of the curved surface of the cylinder-shaped PN junction, a breakdown path under a reverse bias is provided so as to control the breakdown voltage. In this way, the defects of the power diode won't affect the forming of the depletion region and the voltage snap-down problem is eliminated.
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