发明申请
US20060278896A1 Solid-state image sensing device 失效
固态摄像装置

  • 专利标题: Solid-state image sensing device
  • 专利标题(中): 固态摄像装置
  • 申请号: US11448020
    申请日: 2006-06-07
  • 公开(公告)号: US20060278896A1
    公开(公告)日: 2006-12-14
  • 发明人: Shunsuke Inoue
  • 申请人: Shunsuke Inoue
  • 申请人地址: JP Tokyo
  • 专利权人: CANON KABUSHIKI KAISHA
  • 当前专利权人: CANON KABUSHIKI KAISHA
  • 当前专利权人地址: JP Tokyo
  • 优先权: JP2005-171659 20050610
  • 主分类号: H01L29/768
  • IPC分类号: H01L29/768
Solid-state image sensing device
摘要:
A solid-state image sensing device has a pixel that includes a photodiode that generates an electrical charge according to an amount of incoming light, a floating diffusion portion, a charge transfer transistor that transfers the electrical charge to the floating diffusion portion from the photoelectric conversion portion, a reading circuit that outputs an signal on the basis of said electrical charge held in said floating diffusion portion, and a light-shielding member disposed so as to cover a side wall of a gate electrode of the charge transfer transistor on the photoelectric conversion portion side.
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信息查询
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L29/00 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件(H01L31/00至H01L47/00,H01L51/05优先;除半导体或其电极之外的零部件入H01L23/00;由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00)
H01L29/66 .按半导体器件的类型区分的
H01L29/68 ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的(H01L29/96优先)
H01L29/76 ...单极器件
H01L29/762 ....电荷转移器件
H01L29/765 .....电荷耦合器件
H01L29/768 ......具有由绝缘栅产生的场效层的
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