发明申请
- 专利标题: Solid-state image sensing device
- 专利标题(中): 固态摄像装置
-
申请号: US11448020申请日: 2006-06-07
-
公开(公告)号: US20060278896A1公开(公告)日: 2006-12-14
- 发明人: Shunsuke Inoue
- 申请人: Shunsuke Inoue
- 申请人地址: JP Tokyo
- 专利权人: CANON KABUSHIKI KAISHA
- 当前专利权人: CANON KABUSHIKI KAISHA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2005-171659 20050610
- 主分类号: H01L29/768
- IPC分类号: H01L29/768
摘要:
A solid-state image sensing device has a pixel that includes a photodiode that generates an electrical charge according to an amount of incoming light, a floating diffusion portion, a charge transfer transistor that transfers the electrical charge to the floating diffusion portion from the photoelectric conversion portion, a reading circuit that outputs an signal on the basis of said electrical charge held in said floating diffusion portion, and a light-shielding member disposed so as to cover a side wall of a gate electrode of the charge transfer transistor on the photoelectric conversion portion side.
公开/授权文献
- US07456453B2 Solid-state image sensing device 公开/授权日:2008-11-25
信息查询
IPC分类: