发明申请
- 专利标题： Thin film capacitance element composition, high permittivity insulation film, thin film capacitance element, thin film multilayer capacitor and production method of thin film capacitance element
- 专利标题（中）： 薄膜电容元件组成，高介电常数绝缘膜，薄膜电容元件，薄膜多层电容器及薄膜电容元件的制作方法
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申请号： US10542847申请日： 2004-01-16
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公开(公告)号： US20060279901A1公开(公告)日： 2006-12-14
- 发明人: Yuki Miyamoto , Yukio Sakashita
- 申请人： Yuki Miyamoto , Yukio Sakashita
- 优先权： JP2003-012086 20030121
- 国际申请： PCT/JP04/00273 WO 20040116
- 主分类号： H01G4/255
- IPC分类号： H01G4/255
摘要：
A thin film capacitance element composition, wherein a bismuth layer compound having a c-axis oriented vertically with respect to a substrate surface is expressed by a composition formula of (Bi2O2)2+ (Am−1BmO2m+1)2− or Bi2Am−1BmO3m+3, wherein “m” is an odd number, “A” is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and “” is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta, Sb, V, Mo and W; and Bi in the bismuth layer compound is excessively included with respect to the composition formula of (Bi2O2)2+(Am−1BmO3m+1)2+ or Bi2Am−1BmO3m+3, and the excessive content of Bi is in a range of 0
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