发明申请
US20060281201A1 Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member, and gallium nitride compound semiconductor membrane
审中-公开
化合物半导体部件的损伤评价方法，化合物半导体部件，氮化镓系化合物半导体部件和氮化镓系化合物半导体膜的制造方法
- 专利标题： Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member, and gallium nitride compound semiconductor membrane
- 专利标题（中）： 化合物半导体部件的损伤评价方法，化合物半导体部件，氮化镓系化合物半导体部件和氮化镓系化合物半导体膜的制造方法
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申请号： US11451298申请日： 2006-06-13
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公开(公告)号： US20060281201A1公开(公告)日： 2006-12-14
- 发明人: Akihiro Hachigo , Takayuki Nishiura , Keiji Ishibashi
- 申请人： Akihiro Hachigo , Takayuki Nishiura , Keiji Ishibashi
- 专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 优先权： JPP2005-172567 20050613
- 主分类号： H01L21/66
- IPC分类号： H01L21/66 ; G01R31/26
摘要：
A method of evaluating damage of a compound semiconductor member, comprising: a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an optical constant obtained by the spectroscopic ellipsometry measurement.