Integration schemes are presented which provide for decoupling the placement of deep source/drain (S/D) implants with respect to a selective epitaxial growth (SEG) raised S/D region, as well as decoupling silicide placement relative to a raised S/D feature. These integration schemes may be combined in multiple ways to permit independent control of the placement of these features for optimizing device performance. The methodology utilizes multiple spacers to decrease current crowding effects in devices due to proximity effects between LDD and deep S/D regions in reduced architecture devices.