发明申请
US20060285402A1 APPARATUS AND METHODS FOR MULTI-LEVEL SENSING IN A MEMORY ARRAY
有权
用于存储阵列中多级感测的装置和方法
- 专利标题: APPARATUS AND METHODS FOR MULTI-LEVEL SENSING IN A MEMORY ARRAY
- 专利标题(中): 用于存储阵列中多级感测的装置和方法
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申请号: US11464253申请日: 2006-08-14
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公开(公告)号: US20060285402A1公开(公告)日: 2006-12-21
- 发明人: Oleg Dadashev , Yoram Betser , Eduardo Maayan
- 申请人: Oleg Dadashev , Yoram Betser , Eduardo Maayan
- 申请人地址: IL Netanya
- 专利权人: SAIFUN SEMICONDUCTORS LTD.
- 当前专利权人: SAIFUN SEMICONDUCTORS LTD.
- 当前专利权人地址: IL Netanya
- 主分类号: G11C5/14
- IPC分类号: G11C5/14
摘要:
A method for sensing a signal received from an array cell within a memory array, the method comprising the steps of generating an analog voltage Vddr proportional to a current of a selected array cell of the memory array, and comparing the analog voltage Vddr with a reference analog voltage Vcomp to generate an output digital signal. A method is also provided for sensing a memory cell by transforming a signal from a memory cell to a time delay, and sensing the memory cell by comparing the time delay to a time delay of a reference cell. Related apparatus is also disclosed.
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