- 专利标题： Semiconductor laser capable of coupling with single mode optical fiber at high coupling efficiency
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申请号： US10553161申请日： 2005-03-15
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公开(公告)号： US20060285560A1公开(公告)日： 2006-12-21
- 发明人: Yasuaki Nagashima , Atsushi Yamada , Yoshiharu Shimon , Tomoyuki Kikugawa
- 申请人： Yasuaki Nagashima , Atsushi Yamada , Yoshiharu Shimon , Tomoyuki Kikugawa
- 国际申请： PCT/JP05/04556 WO 20050315
- 主分类号： H01S3/098
- IPC分类号： H01S3/098 ; H01S5/00 ; H01S3/08
摘要：
A semiconductor laser includes a substrate made of InP, an active layer including a multiquantum well structure, which is formed in a width of 7 to 14 μm on the substrate, and an n-type cladding layer made of InGaAsP and a p-type cladding layer made of InP, which are formed on the substrate with the active layer interposed therebetween. The semiconductor laser oscillates only in the fundamental lateral mode, and light emitted from an exit facet can be optically coupled with an external single mode optical fiber.