发明申请
- 专利标题: Semiconductor device and manufacturing method of the same
- 专利标题(中): 半导体器件及其制造方法相同
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申请号: US11390288申请日: 2006-03-28
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公开(公告)号: US20060289953A1公开(公告)日: 2006-12-28
- 发明人: Kiwamu Sakuma , Yoshinori Tsuchiya , Masato Koyama
- 申请人: Kiwamu Sakuma , Yoshinori Tsuchiya , Masato Koyama
- 优先权: JPP2005-187037 20050627
- 主分类号: H01L29/94
- IPC分类号: H01L29/94
摘要:
A semiconductor device includes a first semiconductor layer of a first conductivity type, a first gate insulating film, a first gate electrode and first source/drain regions. The first gate insulating film is formed on the first semiconductor layer. The first gate electrode is formed on the first gate insulating film. The first gate electrode includes crystal grains of a first metal consisting of Ru, and a second metal selected from the group consisting of W, Ni, Mo, Rh, Pd, Re Ir, and Pt. The second metal is segregated at a grain boundary between the crystal grains of the first metal. The first source/drain regions are formed in the first semiconductor layer, across the first gate insulating film from each other in a gate length direction of the first gate insulating film.