发明申请
- 专利标题: Electron emitter
- 专利标题(中): 电子发射体
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申请号: US11471938申请日: 2006-06-21
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公开(公告)号: US20060290255A1公开(公告)日: 2006-12-28
- 发明人: Hirofumi Yamaguchi , Kei Sato
- 申请人: Hirofumi Yamaguchi , Kei Sato
- 申请人地址: JP Nagoya-Shi
- 专利权人: NGK Insulators, Ltd.
- 当前专利权人: NGK Insulators, Ltd.
- 当前专利权人地址: JP Nagoya-Shi
- 优先权: JP2005-183308 20050623
- 主分类号: H01J9/02
- IPC分类号: H01J9/02
摘要:
A dielectric-film-type electron emitter includes an emitter section, a first electrode, and a second electrode. The emitter section is formed of a thin layer of a polycrystalline dielectric material. The dielectric material constituting the emitter section is formed of a material having high mechanical quality factor (Qm). Specifically, the dielectric material has a Qm higher than that of a so-called low-Qm material (a material having a Qm of 100 or less). The Qm of the dielectric material is preferably 300 or more, more preferably 500 or more.
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