发明申请
- 专利标题： Chemical die singulation technique
- 专利标题（中）： 化学模切技术
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申请号： US11159553申请日： 2005-06-22
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公开(公告)号： US20060292827A1公开(公告)日： 2006-12-28
- 发明人: Brian Condie , David Dougherty , Mahesh Shah
- 申请人： Brian Condie , David Dougherty , Mahesh Shah
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method is provided for manufacturing a semiconductor device from a substrate (200) having an active surface (204) and a non-active surface (206). The method comprises depositing a backing material (104) onto the non-active surface of the substrate (206) in a pattern (500), the pattern (500) having at least a first die section (210), a second die section (212) adjacent the first die section (210), and a strip (216) connecting the first die section (210) and the second die section (212), removing material from portions of the non-active surface of the substrate (206) on which the backing material (104) is not deposited to thereby partially separate the substrate (200) into a first die (236) and a second die (238) connected to one another by the strip (254) of the deposited backing material, and breaking the strip connector (254) to separate the first die (236) from the second die (238).
公开/授权文献
- US07332414B2 Chemical die singulation technique 公开/授权日：2008-02-19
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