发明申请
- 专利标题： Method of working nitride semiconductor crystal
- 专利标题（中）： 氮化物半导体晶体的制作方法
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申请号： US11472417申请日： 2006-06-22
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公开(公告)号： US20060292832A1公开(公告)日： 2006-12-28
- 发明人: Keiji Ishibashi , Akihiro Hachigo , Takayuki Nishiura
- 申请人： Keiji Ishibashi , Akihiro Hachigo , Takayuki Nishiura
- 专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sumitomo Electric Industries, Ltd.
- 优先权： JP2005-184367(P) 20050624; JP2006-079063(P) 20060322
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
In a method of working a crystal, when a nitride semiconductor crystal is worked, voltage is applied between the nitride semiconductor crystal and a tool electrode to cause electrical discharge, so that the crystal is partially removed and worked by local heat generated by the electrical discharge.
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