发明申请
- 专利标题： PLASMA CONTROL USING DUAL CATHODE FREQUENCY MIXING
- 专利标题（中）： 使用双阴极频率混合的等离子体控制
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申请号： US11530670申请日： 2006-09-11
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公开(公告)号： US20070000611A1公开(公告)日： 2007-01-04
- 发明人: Steven Shannon , Dennis Grimard , Theodoros Panagopoulos , Daniel Hoffman , Michael Chafin , Troy Detrick , Alexander Paterson , Jingbao Liu , Taeho Shin , Bryan Pu
- 申请人： Steven Shannon , Dennis Grimard , Theodoros Panagopoulos , Daniel Hoffman , Michael Chafin , Troy Detrick , Alexander Paterson , Jingbao Liu , Taeho Shin , Bryan Pu
- 申请人地址： US CA SANTA CLARA
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA SANTA CLARA
- 主分类号： C23F1/00
- IPC分类号： C23F1/00 ; C23C16/00
摘要：
A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.