发明申请
- 专利标题： Method for dry etching fluid feed slots in a silicon substrate
- 专利标题（中）： 在硅衬底中干蚀刻流体进料槽的方法
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申请号： US11170895申请日： 2005-06-30
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公开(公告)号： US20070000863A1公开(公告)日： 2007-01-04
- 发明人: David Bernard , John Krawczyk , Andrew McNees
- 申请人： David Bernard , John Krawczyk , Andrew McNees
- 主分类号： C23F1/00
- IPC分类号： C23F1/00 ; G11B5/127 ; H01L21/00 ; B44C1/22
摘要：
A method of micro-machining a semiconductor substrate to form one or more through slots therein. The semiconductor substrate has a device side and a fluid side opposite the device side. The method includes diffusing a p-type doping material into the device side of the semiconductor substrate in one or more through slot locations to be etched through a thickness of the substrate. The semiconductor substrate is then etched with a dry etch process from the device side of the substrate to the fluid side of the substrate so that one or more through slots having a reentrant profile are formed in the substrate.
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