发明申请
US20070001192A1 Nitride-based semiconductor element and method of forming nitride-based semiconductor
有权
基于氮化物的半导体元件和形成氮化物基半导体的方法
- 专利标题: Nitride-based semiconductor element and method of forming nitride-based semiconductor
- 专利标题(中): 基于氮化物的半导体元件和形成氮化物基半导体的方法
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申请号: US11518174申请日: 2006-09-11
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公开(公告)号: US20070001192A1公开(公告)日: 2007-01-04
- 发明人: Nobuhiko Hayashi , Tatsuya Kunisato , Hiroki Ohbo , Tsutomu Yamaguchi
- 申请人: Nobuhiko Hayashi , Tatsuya Kunisato , Hiroki Ohbo , Tsutomu Yamaguchi
- 申请人地址: JP Osaka
- 专利权人: SANYO ELECTRIC CO., LTD
- 当前专利权人: SANYO ELECTRIC CO., LTD
- 当前专利权人地址: JP Osaka
- 优先权: JPJP2001-56284 20010301
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
A nitride-based semiconductor element having excellent element characteristics is obtained by obtaining a nitride-based semiconductor layer having excellent crystallinity without performing a long-time etching process. This nitride-based semiconductor element comprises a mask layer, having a recess portion, formed on a substantially flat upper surface of an underlayer to partially expose the upper surface of the underlayer, a nitride-based semiconductor layer formed on the exposed part of the underlayer and the mask layer while forming a void on the recess portion of the mask layer, and a nitride-based semiconductor element layer, formed on the nitride-based semiconductor layer, having an element region. Thus, the nitride-based semiconductor layer is formed while forming the void on the recess portion of the mask layer when laterally grown on the mask layer, whereby strain of the laterally grown nitride-based semiconductor layer is so relaxed that the nitride-based semiconductor layer is improved in crystallinity. The underlayer is formed in a substantially flat shape, whereby no etching may be performed over a long time dissimilarly to a case of forming recess portions on an underlayer consisting of a nitride-based semiconductor or the like.
公开/授权文献
- US07279344B2 Method of forming a nitride-based semiconductor 公开/授权日:2007-10-09