发明申请
- 专利标题： Ultrathin-body schottky contact MOSFET
- 专利标题（中）： 超薄体肖特基接触MOSFET
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申请号： US11172711申请日： 2005-07-01
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公开(公告)号： US20070001223A1公开(公告)日： 2007-01-04
- 发明人: Diane Boyd , Meikei Leong , Jakub Kedzierski , Ghavam Shahidi
- 申请人： Diane Boyd , Meikei Leong , Jakub Kedzierski , Ghavam Shahidi
- 主分类号： H01L27/12
- IPC分类号： H01L27/12
摘要：
An ultra thin SOI MOSFET device structure and method of fabrication is presented. The device has a terminal composed of silicide, which terminal is forming a Schottky contact with the channel. A plurality of impurities are segregated on the silicide/channel interface, and these segregated impurities determine the resistance of the Schottky contact. Such impurity segregation is achieved by a so called silicidation induced impurity segregation process. Silicon substitutional impurities are appropriate for accomplishing such a segregation.
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