发明申请
US20070001255A1 Input power protected ratiometric output sensor circuit 失效
输入电源保护比例输出传感器电路

  • 专利标题: Input power protected ratiometric output sensor circuit
  • 专利标题(中): 输入电源保护比例输出传感器电路
  • 申请号: US11472802
    申请日: 2006-06-22
  • 公开(公告)号: US20070001255A1
    公开(公告)日: 2007-01-04
  • 发明人: Yingjie Lin
  • 申请人: Yingjie Lin
  • 主分类号: H01L31/058
  • IPC分类号: H01L31/058
Input power protected ratiometric output sensor circuit
摘要:
MOSFETs are provided to connect the sensor input terminals of a ratiometric output sensor to a pair of power terminals, and the gate of each MOSFET is coupled to the opposite power terminal so that both MOSFETs are rendered conducting to power the sensor when a supply voltage of a predetermined polarity is connected across the power terminals but one of the MOSFETs is rendered non-conducting when a voltage of the opposite polarity is so applied. The MOSFET that is rendered non-conducting is oriented so that any internal source-drain diode does not bypass current around the MOSFET when voltage of the opposite polarity is applied. Optionally, over-voltage protection is provided by an input voltage sensor controlling the other MOSFET through a third MOSFET.
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