发明申请
- 专利标题: Input power protected ratiometric output sensor circuit
- 专利标题(中): 输入电源保护比例输出传感器电路
-
申请号: US11472802申请日: 2006-06-22
-
公开(公告)号: US20070001255A1公开(公告)日: 2007-01-04
- 发明人: Yingjie Lin
- 申请人: Yingjie Lin
- 主分类号: H01L31/058
- IPC分类号: H01L31/058
摘要:
MOSFETs are provided to connect the sensor input terminals of a ratiometric output sensor to a pair of power terminals, and the gate of each MOSFET is coupled to the opposite power terminal so that both MOSFETs are rendered conducting to power the sensor when a supply voltage of a predetermined polarity is connected across the power terminals but one of the MOSFETs is rendered non-conducting when a voltage of the opposite polarity is so applied. The MOSFET that is rendered non-conducting is oriented so that any internal source-drain diode does not bypass current around the MOSFET when voltage of the opposite polarity is applied. Optionally, over-voltage protection is provided by an input voltage sensor controlling the other MOSFET through a third MOSFET.
公开/授权文献
- US07453268B2 Input power protected ratiometric output sensor circuit 公开/授权日:2008-11-18
信息查询