发明申请
- 专利标题： Inorganic semiconductive films and methods therefor
- 专利标题（中）： 无机半导体膜及其制备方法
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申请号： US11173521申请日： 2005-07-02
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公开(公告)号： US20070003877A1公开(公告)日： 2007-01-04
- 发明人: David Punsalan , John Thompson
- 申请人： David Punsalan , John Thompson
- 申请人地址： US CO Fort Collins 80527-2400
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： US CO Fort Collins 80527-2400
- 主分类号： G03C5/00
- IPC分类号： G03C5/00
摘要：
Inorganic semiconductive films are made by depositing a suitable precursor substance upon a substrate, irradiating the precursor substance with electromagnetic radiation to form a nascent film, and heating the nascent film at a predetermined temperature to form an inorganic semiconductive film.
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