发明申请
US20070004145A1 Method of manufacturing semiconductor device having recess gate structure with varying recess width for increased channel length
有权
制造半导体器件的方法，该半导体器件具有用于增加沟道长度的具有变化的凹槽宽度的凹陷栅极结构
- 专利标题： Method of manufacturing semiconductor device having recess gate structure with varying recess width for increased channel length
- 专利标题（中）： 制造半导体器件的方法，该半导体器件具有用于增加沟道长度的具有变化的凹槽宽度的凹陷栅极结构
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申请号： US11318960申请日： 2005-12-27
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公开(公告)号： US20070004145A1公开(公告)日： 2007-01-04
- 发明人: Jong Kim , Chang Lee , Jong Kim , Se Won
- 申请人： Jong Kim , Chang Lee , Jong Kim , Se Won
- 优先权： KR10-2005-0058570 20050630
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A varying-width recess gate structure having a varying-width recess formed in a semiconductor device can sufficiently increase the channel length of the transistor having a gate formed in the varying-width recess, thereby effectively reducing the current leakage and improving the refresh characteristics. In the method of manufacturing the recess gate structure, etching is performed twice or more, so as to form a gate recess having varying width in the substrate, and a gate is formed in the gate recess.
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