发明申请
- 专利标题： Method for fabricating capacitor of semiconductor device
- 专利标题（中）： 制造半导体器件电容器的方法
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申请号： US11269095申请日： 2005-11-08
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公开(公告)号： US20070004166A1公开(公告)日： 2007-01-04
- 发明人: Soo Lee
- 申请人： Soo Lee
- 申请人地址： KR Icheon-Shi
- 专利权人： HYNIX SEMICONDUCTOR INC.
- 当前专利权人： HYNIX SEMICONDUCTOR INC.
- 当前专利权人地址： KR Icheon-Shi
- 优先权： KR2005-58774 20050630
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
Disclosed herein is a method for fabricating a capacitor of a semiconductor device. The method comprises the steps of forming an interlayer insulating film on a semiconductor substrate, forming contact plugs connected to the semiconductor substrate though the interlayer insulating film, forming a first storage node oxide film include a PSG film on the contact plugs, cleaning the semiconductor substrate on which the first storage node oxide film include a PSG film is formed, using isopropyl alcohol (IPA), to remove water-soluble compounds, and forming a second storage node oxide film on the first storage node oxide film.
公开/授权文献
- US07410865B2 Method for fabricating capacitor of semiconductor device 公开/授权日：2008-08-12
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