发明申请
- 专利标题： Failure prediction for parallel mosfets
- 专利标题（中）： 并联MOSFET的故障预测
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申请号： US10570211申请日： 2004-08-20
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公开(公告)号： US20070007519A1公开(公告)日： 2007-01-11
- 发明人: Thomas Durbaum
- 申请人： Thomas Durbaum
- 优先权： EP03102689.1 20030903
- 国际申请： PCT/IB04/51511 WO 20040820
- 主分类号： H01L23/58
- IPC分类号： H01L23/58
摘要：
Power conversion circuits often consist of several MOSFETs operating in parallel. Due to thermal cycling and mechanical operations, MOSFETs or the respective electric connections of the MOSFETs may fail. According to the present invention, there is provided a diagnosis circuit for a plurality of parallel MOSFETs, which predicts or determines a possible failure on the basis of at least one of temperatures of the MOSFETs or gate voltages of the MOSFETs. Advantageously, a continuous monitoring of the MOSFETs may be provided and an early determination of failures of the MOSFETs can be provided.
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