发明申请
- 专利标题： Semiconductor device and method for fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11371253申请日： 2006-03-09
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公开(公告)号： US20070007564A1公开(公告)日： 2007-01-11
- 发明人: Shigenori Hayashi , Riichiro Mitsuhashi
- 申请人： Shigenori Hayashi , Riichiro Mitsuhashi
- 优先权： JP2005-170208 20050709
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
A semiconductor device includes: an n-transistor including a first gate insulating film made of a high-dielectric-constant material and a first gate electrode fully silicided with a metal, the first gate insulating film and the first gate electrode being formed in this order over a semiconductor region; and a p-transistor including a second gate insulating film made of the high-dielectric-constant material and a second gate electrode fully silicided with the metal, the second gate insulating film and the second gate electrode being formed in this order over the semiconductor region. If the metal has a work function larger than a Fermi level in potential energy of electrons of silicon, a metal concentration of the second gate electrode is higher than that of the first gate electrode whereas if the metal has a work function smaller than the Fermi level of silicon, a metal concentration of the second gate electrode is lower than that of the first gate electrode.
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