发明申请
US20070007581A1 Non-planar non-volatile memory cell with an erase gate, an array therefor, and a method of making same
有权
具有擦除栅极的非平面非易失性存储单元及其阵列及其制造方法
- 专利标题： Non-planar non-volatile memory cell with an erase gate, an array therefor, and a method of making same
- 专利标题（中）： 具有擦除栅极的非平面非易失性存储单元及其阵列及其制造方法
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申请号： US11520993申请日： 2006-09-14
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公开(公告)号： US20070007581A1公开(公告)日： 2007-01-11
- 发明人: Bomy Chen , Sohrab Kianian , Yaw Hu
- 申请人： Bomy Chen , Sohrab Kianian , Yaw Hu
- 专利权人： Silicon Storage Technology Inc.
- 当前专利权人： Silicon Storage Technology Inc.
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L21/336
摘要：
A memory cell has a trench formed into a surface of a semiconductor substrate, and spaced apart source and drain regions with a channel region formed therebetween. The source region is formed underneath the trench, and the channel region includes a first portion extending vertically along a sidewall of the trench and a second portion extending horizontally along the substrate surface. An electrically conductive floating gate is disposed in the trench adjacent to and insulated from the channel region first portion. An electrically conductive control gate is disposed over and insulated from the channel region second portion. An erase gate is disposed in the trench adjacent to and insulated from the floating gate. A block of conductive material has at least a lower portion thereof disposed in the trench adjacent to and insulated from the erase gate, and electrically connected to the source region.
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