- 专利标题： THERMAL DISSIPATION STRUCTURES FOR FINFETS
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申请号： US11160360申请日： 2005-06-21
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公开(公告)号： US20070010049A1公开(公告)日： 2007-01-11
- 发明人: Brent Anderson , Edward Nowak , Jed Rankin , William Clark
- 申请人： Brent Anderson , Edward Nowak , Jed Rankin , William Clark
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234
摘要：
A fin-type field effect transistor has an insulator layer above a substrate and a fin extending above the insulator layer. The fin has a channel region, and source and drain regions. A gate conductor is positioned over the channel region. The insulator layer includes a heat dissipating structural feature adjacent the fin, and a portion of the gate conductor contacts the heat dissipating structural feature. The heat dissipating structural feature can comprise a recess within the insulator layer or a thermal conductor extending through the insulator layer.
公开/授权文献
- US07268397B2 Thermal dissipation structures for finfets 公开/授权日：2007-09-11
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