A method for manufacturing a semiconductor device is disclosed, which comprises the steps of (i) forming a circuit element on a semiconductor substrate, (ii) forming a dielectric that covers the circuit element, (iii) forming a first electrode on the dielectric, (iv) forming a ferroelectric film on the first electrode, (v) forming a second electrode on the ferroelectric film, (vi) forming a hardmask on the second electrode, (vii) etching the first electrode, the ferroelectric film, and the second electrode using the hardmask as an etching mask, and (viii) removing the hardmask and redeposition that is attached after said etching to a sidewall of the ferroelectric film simultaneously.