发明申请
- 专利标题： Wiring structure and method for manufacturing the same
- 专利标题（中）： 接线结构及其制造方法
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申请号： US10558367申请日： 2004-05-28
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公开(公告)号： US20070013069A1公开(公告)日： 2007-01-18
- 发明人: Munehiro Tada , Yoshihiro Hayashi , Yoshimichi Harada , Fuminori Ito , Hiroto Ohtake , Tatsuya Usami
- 申请人： Munehiro Tada , Yoshihiro Hayashi , Yoshimichi Harada , Fuminori Ito , Hiroto Ohtake , Tatsuya Usami
- 优先权： JP2003-152743 20030529
- 国际申请： PCT/JP04/07791 WO 20040528
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L23/48 ; H01L29/40
摘要：
A multilayer wiring structure for connecting a semiconductor device is disclosed which is obtained by forming metal wirings on a substrate in which the semiconductor device is formed. The wiring structure free from such conventional problems that insulation between wirings next to each other is damaged or insulation resistance between wirings next to each other is deteriorated by generation of leakage current when fine metal wirings are formed in a porous insulating film. A method for producing such a wiring structure is also disclosed. In the metal wiring structure on the substrate in which the semiconductor device is formed, a insulating barrier layer (413) containing an organic matter is formed between an interlayer insulating film and a metal wiring. This insulating barrier layer reduces leakage current between wirings next to each other, thereby improving insulation reliability.
公开/授权文献
- US07701060B2 Wiring structure and method for manufacturing the same 公开/授权日：2010-04-20