发明申请
- 专利标题: Semiconductor device having super junction structure and method for manufacturing the same
- 专利标题(中): 具有超结结构的半导体器件及其制造方法
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申请号: US11472547申请日: 2006-06-22
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公开(公告)号: US20070013412A1公开(公告)日: 2007-01-18
- 发明人: Shoichi Yamauchi , Tomoatsu Makino , Makoto Kuwahara , Yoshiyuki Hattori
- 申请人: Shoichi Yamauchi , Tomoatsu Makino , Makoto Kuwahara , Yoshiyuki Hattori
- 申请人地址: JP Kariya-city
- 专利权人: DENSO CORPORATION
- 当前专利权人: DENSO CORPORATION
- 当前专利权人地址: JP Kariya-city
- 优先权: JP2005-182905 20050623
- 主分类号: H03K19/091
- IPC分类号: H03K19/091
摘要:
A semiconductor device includes: a cell region; a terminal region; a lower semiconductor layer; a intermediate semiconductor layer on the lower semiconductor layer including a super junction structure; a terminal upper semiconductor layer on the intermediate semiconductor layer; a terminal contact semiconductor region on a surface portion of the terminal upper semiconductor layer adjacent to the cell region; an insulation layer on the terminal upper semiconductor layer having a first part adjacent to the cell region with a small thickness and a second part adjacent to the first part with a large thickness; and a conductive layer in the cell region and a part of the terminal region, the conductive layer extending from the cell region to the part of the terminal region beyond the first part of the insulation layer.
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