发明申请
US20070013412A1 Semiconductor device having super junction structure and method for manufacturing the same 有权
具有超结结构的半导体器件及其制造方法

Semiconductor device having super junction structure and method for manufacturing the same
摘要:
A semiconductor device includes: a cell region; a terminal region; a lower semiconductor layer; a intermediate semiconductor layer on the lower semiconductor layer including a super junction structure; a terminal upper semiconductor layer on the intermediate semiconductor layer; a terminal contact semiconductor region on a surface portion of the terminal upper semiconductor layer adjacent to the cell region; an insulation layer on the terminal upper semiconductor layer having a first part adjacent to the cell region with a small thickness and a second part adjacent to the first part with a large thickness; and a conductive layer in the cell region and a part of the terminal region, the conductive layer extending from the cell region to the part of the terminal region beyond the first part of the insulation layer.
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