发明申请
- 专利标题: Multi spectral sensor
- 专利标题(中): 多光谱传感器
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申请号: US11182310申请日: 2005-07-14
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公开(公告)号: US20070015301A1公开(公告)日: 2007-01-18
- 发明人: David Wen , Xinqiao Liu , Ahn Vu , Steven Onishi
- 申请人: David Wen , Xinqiao Liu , Ahn Vu , Steven Onishi
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A light sensor having a light conversion element between first and second electrodes is disclosed. The light conversion element includes a body of semiconductor material having first and second surfaces. The body of semiconductor material is of a first conductivity type and has doping elements in a concentration gradient that creates a first electrostatic field having a magnitude that varies monotonically from the first surface to the second surface. A bias circuit applies a variable potential between the first and second electrodes to create a second electrostatic field having a direction opposite to that of the first electrostatic field and a magnitude determined by the potential. One of the electrodes is transparent to light in a predetermined band of wavelengths. The body of semiconductor material can include an epitaxial body having a monotonically increasing concentration of a doping element as a function of the distance from one the surfaces.
公开/授权文献
- US07655493B2 Multi spectral sensor 公开/授权日:2010-02-02