A method and apparatus for etching photomasks is provided herein. In one embodiment, a method for etching a photomask includes placing a reticle upon a pedestal of a processing chamber, forming a plasma from a process gas, preferentially allowing neutrally charged radicals to pass through the plate relative to ions present in the plasma and etching a layer disposed on the reticle. In another embodiment, an apparatus for etching a photomask includes a process chamber having a substrate support pedestal disposed therein that is adapted to receive a photomask reticle thereon. An RF power source is provided for forming a plasma within a processing volume of the chamber. A plate having a plurality of holes formed therein is supported in the processing volume in an orientation substantially parallel to and a spaced apart from both the substrate support pedestal and a lid of the processing chamber.