发明申请
- 专利标题： INTERFEROMETER ENDPOINT MONITORING DEVICE
- 专利标题（中）： 干涉仪端点监测装置
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申请号： US11531467申请日： 2006-09-13
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公开(公告)号： US20070023393A1公开(公告)日： 2007-02-01
- 发明人: Khiem Nguyen , Peter Satitpunwaycha , Alfred Mak
- 申请人： Khiem Nguyen , Peter Satitpunwaycha , Alfred Mak
- 主分类号： G01L21/30
- IPC分类号： G01L21/30 ; C23F1/00
摘要：
A photomask etch chamber, which includes a substrate support member disposed inside the chamber. The substrate support member is configured to support a photomask substrate. The chamber further includes a ceiling disposed on the chamber and an endpoint detection system configured to detect a peripheral region of the photomask substrate.
公开/授权文献
- US07682984B2 Interferometer endpoint monitoring device 公开/授权日：2010-03-23
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