发明申请
- 专利标题: Charged particle beam application system
- 专利标题(中): 带电粒子束应用系统
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申请号: US11475934申请日: 2006-06-28
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公开(公告)号: US20070023654A1公开(公告)日: 2007-02-01
- 发明人: Osamu Kamimura , Tadashi Kanosue , Yasunari Sohda , Susumu Goto
- 申请人: Osamu Kamimura , Tadashi Kanosue , Yasunari Sohda , Susumu Goto
- 优先权: JPJP2005-187807 20050628
- 主分类号: G21G5/00
- IPC分类号: G21G5/00
摘要:
An object of the present invention is to measure a landing angle even in a multi electron beam lithography system in which current amount of each beam is small. Another object thereof is to measure an absolute value of the landing angle and a relative landing angle with the high SN ratio. In a transmission detector including two diaphragm plates (first and second diaphragms) and a detector, a detection angle determined by a distance between the first and second diaphragms and an aperture diameter of the second diaphragm is made equal to or smaller than the divergence angle of the electron beam to be measured, and the landing angle is determined based on the relation between a center of the fine hole of the first diaphragm and the center of the aperture of the second diaphragm at which the amount of detected current is maximum.
公开/授权文献
- US07385194B2 Charged particle beam application system 公开/授权日:2008-06-10
信息查询
IPC分类:
G | 物理 |
G21 | 核物理;核工程 |
G21G | 化学元素的转变;放射源 |
G21G5/00 | 通过化学反应进行化学元素的推断转变 |