Invention Application
US20070024201A1 Plasma accelerating apparatus and plasma processing system having the same
失效
等离子体加速装置和等离子体处理系统具有相同的功能
- Patent Title: Plasma accelerating apparatus and plasma processing system having the same
- Patent Title (中): 等离子体加速装置和等离子体处理系统具有相同的功能
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Application No.: US11410933Application Date: 2006-04-26
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Publication No.: US20070024201A1Publication Date: 2007-02-01
- Inventor: Won-tae Lee
- Applicant: Won-tae Lee
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Priority: KR2005-0069279 20050729
- Main IPC: H01J7/24
- IPC: H01J7/24

Abstract:
A plasma accelerating apparatus and a plasma processing system, which efficiently elevate a drift velocity of a plasma beam and are simple to manufacture and simple in construction. A channel includes an outlet port opening at an end of the channel. A gas supply portion supplies a gas in the channel. A plasma generator provides ionization energy to the gas in the channel to generate a plasma beam. A plasma accelerating portion includes a plurality of grids transversely arranged spaced apart from each other by a predetermined distance in the channel for accelerating the plasma beam generated by the plasma generator to the outlet port of the channel with an electric field. The plasma accelerating apparatus and the plasma processing system elevate a drift velocity of the plasma beam more efficiently than conventional accelerating apparatuses that use an electromagnetic force induced by a magnetic field and a secondary current.
Public/Granted literature
- US07609002B2 Plasma accelerating apparatus and plasma processing system having the same Public/Granted day:2009-10-27
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